CDM4-600LR

4A,600V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS

Case Type: DPAK

Body Diode Reverse Recovery (trr)
330 ns
Body Diode Stored Charge (Qrr)
2.14 µC
Common Source Input Capacitance (Ciss)
3.5 pF
Common Source Output Capacitance (Coss)
16.9 pF
Common Source Reverse Transfer Capacitance (Crss)
3 pF
Continuous Drain Current (ID)
4 A
Continuous Source Current (Body Diode) (IS)
4 A
Diode Forward On Voltage (VSD)
1.4 V

(0.86 V Typical)

Drain-Source Breakdown Voltage (BVDSS)
600 V
Drain-Source Voltage (VDS)
600 V
Fall Time (tf)
26.9 ns
Gate Leakage Current, Forward (IGSSF)
100 nA
Gate Leakage Current, Reverse (IGSSR)
100 nA
Gate Threshold Voltage (VGS(th))
2 — 4 V

(3.25 V Typical)

Gate-Drain Charge (Qgd)
9.67 nC
Gate-Source Charge (Qgs)
2.78 nC
Gate-Source Voltage (VGS)
30 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
20 A
Maximum Pulsed Source Current (ISM)
20 A
Power Dissipation (PD)
38 W
Rise Time (tr)
30.5 ns
Saturation Drain Current (IDSS)
1 µA

(0.065 µA Typical)

Single Pulse Avalanche Energy (EAS)
214 mJ
Static Drain-Source On Resistance (rDS(ON))
0.88 Ω

(0.77 Ω Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
110 °C/W
Thermal Resistance Junction-Case (ΘJC)
3.29 °C/W
Total Gate Charge (Qg)
16.63 nC
Turn-off Delay Time (tOFF)
51.5 ns
Turn-on Delay Time (tON)
8.8 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CDM4-600LR BK Box@150 Discontinued 4A,600V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS EAR99 8541.29.0095 PBFREE
CDM4-600LR TR13 Tape & Reel@2,500 Discontinued 4A,600V Surface mount MOSFET N-Channel Enhancement Mode - UltraMOS EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Ni added Al Bond Wire Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CDM4-600LR.PDF Device Datasheet
Material Composition:DPAK Material Composition
Package Detail Document:DPAK Package Detail Document
Process Change Notice:CP401 replaces CP390 Process Change Notice
Product Brief:600V-700V UltraMOS MOSFETs Product Brief
Product Brief:PB HV MOSFET Product Brief
Product EOL Notice:CDM2205-800FP Product EOL Notice
Product Reliability Data:DPAK Package Reliability Product Reliability Data
Spice Model:Spice Model CDM4-600LR Spice Model

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We provide the highest level of support to insure product is delivered on-time:

  • Free quick ship samples (2nd day air)
  • Online technical data and parametric search
  • SPICE models
  • Custom electrical curves
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  • Up-screening capabilities
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  • Custom electrical curves
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  • Package details
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  • Application and design sample kits
  • Custom product and package development