CMPDM203NH

3.2A,20V Surface mount MOSFET N-Channel Enhancement Mode High Current

Case Type: SOT-23F

Common Source Input Capacitance (Ciss)
395 pF
Common Source Output Capacitance (Coss)
97 pF
Common Source Reverse Transfer Capacitance (Crss)
44 pF
Continuous Drain Current (ID)
3.2 A
Drain-Source Breakdown Voltage (BVDSS)
20 V
Drain-Source Voltage (VDS)
20 V
Forward Transconductance (gFS)
10.5 S
Gate Leakage Current, Forward (IGSSF)
10 µA
Gate Leakage Current, Reverse (IGSSR)
10 µA
Gate Threshold Voltage (VGS(th))
0.6 — 1.2 V
Gate-Drain Charge (Qgd)
1.1 nC

(0.9 nC Typical)

Gate-Source Charge (Qgs)
1.2 nC

(0.8 nC Typical)

Gate-Source Voltage (VGS)
12 V
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current (IDM)
12.8 A
Power Dissipation (PD)
350 mW
Saturation Drain Current (IDSS)
1 µA
Static Drain-Source On Resistance (rDS(ON))
50 mΩ

(33 mΩ Typical)

Static Drain-Source On Resistance (rDS(ON))
70 mΩ

(46 mΩ Typical)

Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W
Total Gate Charge (Qg)
10 nC

(6.8 nC Typical)

Turn Off Time (toff)
22.8 ns
Turn On Time (ton)
6 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CMPDM203NH TR Tape & Reel@3,000 Discontinued 3.2A,20V Surface mount MOSFET N-Channel Enhancement Mode High Current EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
CMPDM203NH.PDF Device Datasheet
Material Composition:SOT-23F Material Composition
Package Detail Document:SOT-23F Package Detail Document
Product EOL Notice:CMPDM202PH Product EOL Notice

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