Central Announces New GaN FETs
November 08, 2023 in Press Release
HAUPPAUGE, NY, November 8, 2023 — Central Semiconductor announces the introduction of several new Gallium Nitride (GaN) FETs. The latest additions include the CCSPG1060N (100 V, 60 A) in a CSP3.5X2 package, the CDF56G6511N (650 V, 11.5 A) in a DFN5X6A package, and the CDF56G6517N (650 V, 17 A) in a DN5X6A package. Additional devices in this line are available on demand, as well as the option for bare die configurations.
The new GaN FETs are engineered for maximum efficiency and speed. They provide space-saving along with a high voltage rating of up to 650 V, coupled with impressively low gate charge and rDS(ON) as low as 3.2 mΩ, assuring high performance and reliability. These GaN FETs are ideally suited for a wide range of applications, including wireless charging for defense, aerospace, healthcare, and consumer electronics markets. In addition, they are an essential part of Power Factor Correction systems and electric vehicle inverters.
One of the standout features of these GaN FETs is their remarkably low conduction losses, making them an excellent choice for applications where power efficiency is paramount. Their high-frequency-switching capability facilitates seamless operation. Most significantly, these devices minimize reverse recovery loss.
Pricing for the CCSPG1060N TR starts at US $2.90 for 1,500 pcs. on 7-inch tape and reel.
Pricing for the CDF56G6511N TR starts at US $2.35 for 2,500 pcs. on 13-inch tape and reel.
Pricing for the CDF56G6517N TR starts at US $2.75 for 2,500 pcs. on 13-inch tape and reel.
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