New Product: Silicon Carbide Schottky Rectifier bare die
August 25, 2020 in Press Release
HAUPPAUGE, NY, August 25, 2020 — Central Semiconductor Corp., a leading manufacturer of innovative discrete semiconductor solutions, introduces its new portfolio of Silicon Carbide Schottky Rectifier die. Optimized for high temperature applications, these devices are available in both 650 V and 1200 V, with a current range of 4 A to 30 A for 650 V devices, and 2 A and 50 A for 1,200 V devices.
The primary benefits of Silicon Carbide (SiC) over silicon (Si) are stable switching performance over temperature extremes and high levels of energy efficiency. Theoretically, SiC die can operate at junction temperatures greater than 600 °C, well above the package device rating. The attractive electrical properties make SiC one of the most compelling semiconductor technologies in the industry. These devices provide exceptional energy efficiency as a result of low total conduction losses, and minimal electrical characteristic changes over a wide temperature range. These Schottky rectifiers are ideal for power inverters, industrial motor drives, switch-mode power supplies, power factor correction (PFC), and over-current protection.
Central’s product portfolio includes the following devices: Central Semiconductor Corp. manufactures innovative discrete semiconductors to meet design engineers’ ever changing challenges.
Bare die devices are available as full unsawn wafers, sawn on a plastic ring or metal frame, and waffle-packed in chip form. Additionally, complete specifications for the Silicon Carbide Schottky rectifier bare die portfolio are available. Contact us today to learn more.
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