CPD06-1N5400

Technical Specifications

Average Forward Current (I_O)

3 A

Continuous Reverse Voltage (V_R)

600 V

Forward Voltage (V_F)

1.2 V

Junction Temperature (T_j)

-65 — 175 °C

Peak Forward Surge Current (I_FSM)

200 A

Peak Repetitive Reverse Voltage (V_RRM)

600 V

Reverse Voltage Leakage Current (I_R)

5 µA

Reverse Voltage Leakage Current (I_R)

250 µA

RMS Reverse Voltage (V_R(RMS))

420 V

Storage Temperature (T_stg)

-65 — 175 °C

Thermal Resistance Junction-Lead (Θ_JL)

10 °C/W

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
CPD06-1N5400-CT	WafflePack@100	Active	Bare die,89.000 X 89.000 mils,3A Rectifier	EAR99	8541.10.0040	PBFREE
CPD06-1N5400-CT20	WafflePack@20	Special Order Item	Bare die,89.000 X 89.000 mils,3A Rectifier	EAR99	8541.10.0040	PBFREE
CPD06-1N5400-WN	Wafer	Active	Bare die,89.000 X 89.000 mils,3A Rectifier	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPD06-1N5400_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPD06 Anode Pad Size Increase	Process Change Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.