CPD06-1N5550

3A,200V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

3 A

Continuous Reverse Voltage (V_R)

200 V

Forward Voltage (V_F)

1 V

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

100 A

Peak Repetitive Reverse Voltage (V_RRM)

200 V

Reverse Breakdown Voltage (B_VR)

240 V

Reverse Recovery Time (t_rr)

2 µs

Reverse Voltage Leakage Current (I_R)

1 µA

Reverse Voltage Leakage Current (I_R)

75 µA

RMS Reverse Voltage (V_R(RMS))

140 V

Storage Temperature (T_stg)

-65 — 200 °C

Thermal Resistance Junction-Lead (Θ_JL)

30 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD06-1N5550-CM	WafflePack@100		Active	3A,200V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose	EAR99	8541.10.0040	PBFREE
CPD06-1N5550-CT	WafflePack@100		Active	3A,200V Bare die,89.000 X 89.000 mils,Rectifier-General Purpose	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Molybdenum encapsulation	Analytical Test Report
CPD06-1N5550_WPD.PDF	Device Datasheet
Package Detail Document:GPR-4AM	Package Detail Document
Process Change Notice:CPD06 Anode Pad Size Increase	Process Change Notice
Product EOL Notice:GPR Series	Product EOL Notice
Spice Model:Spice Model 1N5550	Spice Model