CPD19-CHD8-06

8A,600V Bare die,87.000 X 87.000 mils,Rectifier-Hyperfast <25ns

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

8 A

Continuous Reverse Voltage (V_R)

600 V

Forward Voltage (V_F)

2.2 V

(1.9 V Typical)

Junction Capacitance (C_J)

35 pF

(26 pF Typical)

Junction Temperature (T_j)

-65 — 175 °C

Peak Forward Surge Current (I_FSM)

70 A

Peak Repetitive Reverse Voltage (V_RRM)

600 V

Reverse Recovery Time (t_rr)

25 ns

(22 ns Typical)

Reverse Voltage Leakage Current (I_R)

10 µA

Reverse Voltage Leakage Current (I_R)

500 µA

RMS Reverse Voltage (V_R(RMS))

420 V

Storage Temperature (T_stg)

-65 — 175 °C

Thermal Resistance Junction-Lead (Θ_JL)

5 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD19-CHD8-06-CT	WafflePack@100		Active	8A,600V Bare die,87.000 X 87.000 mils,Rectifier-Hyperfast <25ns	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPD19-CHD8-06_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document