CPD22-1N5622

Bare die,50.000 X 50.000 mils,Rectifier-General Purpose,High Voltage Rectifier

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

1 A

Continuous Reverse Voltage (V_R)

1000 V

Forward Voltage (V_F)

1.2 V

Junction Capacitance (C_J)

35 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

40 A

Peak Repetitive Reverse Voltage (V_RRM)

1000 V

Reverse Breakdown Voltage (B_VR)

1100 V

Reverse Recovery Time (t_rr)

2 µs

Reverse Voltage Leakage Current (I_R)

500 nA

Reverse Voltage Leakage Current (I_R)

25 µA

RMS Reverse Voltage (V_R(RMS))

700 V

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
CPD22-1N5622-CM	WafflePack@400	Active	Bare die,50.000 X 50.000 mils,Rectifier-General Purpose,High Voltage Rectifier	EAR99	8541.10.0040	PBFREE
CPD22-1N5622-CT	WafflePack@400	Active	Bare die,50.000 X 50.000 mils,Rectifier-General Purpose,High Voltage Rectifier	EAR99	8541.10.0040	PBFREE
CPD22-1N5622-WN	Wafer	Active	Bare die,50.000 X 50.000 mils,Rectifier-General Purpose,High Voltage Rectifier	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Die Attach	Analytical Test Report
Analytical Test Report:Molybdenum encapsulation	Analytical Test Report
CPD22-1N5622_WPD.PDF	Device Datasheet
Material Composition:GPR-1A	Material Composition
Package Detail Document:GPR-1A	Package Detail Document
Product EOL Notice:GPR Series	Product EOL Notice
Spice Model:Spice Model 1N5622	Spice Model

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AEM stands ready to assist with your latest design endeavors as your trusted partner.