CPD69-H1N4007-CM

Bare die,42.500 X 42.500 mils,Rectifier-General Purpose,1A Rectifier

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

1 A

Continuous Reverse Voltage (V_R)

1000 V

Continuous Reverse Voltage (V_R)

700 V

Forward Voltage (V_F)

1.1 V

Junction Temperature (T_j)

-65 — 175 °C

Peak Forward Surge Current (I_FSM)

50 A

Peak Repetitive Reverse Voltage (V_RRM)

1000 V

Reverse Voltage Leakage Current (I_R)

5 µA

Reverse Voltage Leakage Current (I_R)

50 µA

Storage Temperature (T_stg)

-65 — 175 °C

Thermal Resistance Junction-Ambient (Θ_JA)

26 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD69-H1N4007-CM	WafflePack@400		Active	Up-Screened Bare Die MIL-PRF-38534 Class H Equivalent,42.500 X 42.500 mils,Rectifier-General Purpose,1A Rectifier	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPD69-1N4007_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPD69 Wafer Thickness Increase	Process Change Notice
Spice Model:Spice Model CPD69	Spice Model