CPD69-1N5616

1A,400V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

1 A

Continuous Reverse Voltage (V_R)

400 V

Forward Voltage (V_F)

1.2 V

Junction Capacitance (C_J)

35 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

40 A

Peak Repetitive Reverse Voltage (V_RRM)

400 V

Reverse Breakdown Voltage (B_VR)

440 V

Reverse Recovery Time (t_rr)

2 µs

Reverse Voltage Leakage Current (I_R)

500 nA

Reverse Voltage Leakage Current (I_R)

25 µA

RMS Reverse Voltage (V_R(RMS))

280 V

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
CPD69-1N5616-CM	WafflePack@400	Active	1A,400V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose	EAR99	8541.10.0040	PBFREE
CPD69-1N5616-CT	WafflePack@400	Active	1A,400V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose	EAR99	8541.10.0040	PBFREE
CPD69-1N5616-WN	Wafer	Active	1A,400V Bare die,42.500 X 42.500 mils,Rectifier-General Purpose	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPD69-1N5616_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPD69 Wafer Thickness Increase	Process Change Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.