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CPD104R-CFSH2-3L

200mA,30V Bare die,14.567 X 14.567 mils,Diode-Schottky (<1A)

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Average Forward Current (IO)
200 mA
Forward Voltage (VF)
190 mV

(115 mV Typical)

Forward Voltage (VF)
250 mV

(175 mV Typical)

Forward Voltage (VF)
300 mV

(240 mV Typical)

Forward Voltage (VF)
400 mV

(350 mV Typical)

Forward Voltage (VF)
480 mV

(420 mV Typical)

Junction Capacitance (CJ)
25 pF

(11 pF Typical)

Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
3 A
Peak Repetitive Reverse Voltage (VRRM)
30 V
Power Dissipation (PD)
100 mW
Reverse Breakdown Voltage (BVR)
30 V
Reverse Voltage Leakage Current (IR)
10 µA

(4 µA Typical)

Reverse Voltage Leakage Current (IR)
50 µA

(10 µA Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
1250 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD104R-CFSH2-3L-CT WafflePack@400 Active 200mA,30V Bare die,14.567 X 14.567 mils,Diode-Schottky (<1A) EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Package Detail Document:WAFER Package Detail Document
Spice Model:Spice Model CPD104R Spice Model