CPD107-CZSH6-100

Bare die,56.000 X 56.000 mils,3A, 100V Schottky Diode

Case Type: WAFER

Average Forward Current (I_O)

6 A

Continuous Reverse Voltage (V_R)

100 V

Forward Voltage (V_F)

700 mV

Forward Voltage (V_F)

800 mV

Forward Voltage (V_F)

1 V

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

75 A

Peak Repetitive Reverse Voltage (V_RRM)

100 V

Reverse Voltage Leakage Current (I_R)

10 µA

Reverse Voltage Leakage Current (I_R)

20 mA

RMS Reverse Voltage (V_R(RMS))

70 V

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

62.5 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD107-CZSH6-100-WN	Wafer		Active	Bare die,56.000 X 56.000 mils,3A, 100V Schottky Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPD107-CZSH6-100_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document

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AEM stands ready to assist with your latest design endeavors as your trusted partner.