CPD112R-SH05-20L

Bare die,14.960 X 14.960 mils,Low VF Schottky Diode

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

500 mA

Continuous Reverse Voltage (V_R)

20 V

Forward Voltage (V_F)

180 mV

(100 mV Typical)

Forward Voltage (V_F)

240 mV

(160 mV Typical)

Forward Voltage (V_F)

290 mV

(220 mV Typical)

Forward Voltage (V_F)

380 mV

(310 mV Typical)

Forward Voltage (V_F)

500 mV

(450 mV Typical)

Junction Capacitance (C_J)

30 pF

(21 pF Typical)

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

3 A

Peak Repetitive Reverse Voltage (V_RRM)

20 V

Reverse Breakdown Voltage (B_VR)

20 V

Reverse Voltage Leakage Current (I_R)

30 µA

(8 µA Typical)

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

1000 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD112R-SH05-20L-CM	WafflePack@400		Active	Bare die,14.960 X 14.960 mils,Low VF Schottky Diode	EAR99	8541.10.0040	PBFREE
CPD112R-SH05-20L-CT	WafflePack@400		Active	Bare die,14.960 X 14.960 mils,Low VF Schottky Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Package Detail Document:WAFER	Package Detail Document