CPD40-CTLSH5-100

Bare die,68.000 X 68.000 mils,5.0A, 100V Schottky Rectifier

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

5 A

Continuous Reverse Voltage (V_R)

100 V

Forward Voltage (V_F)

800 mV

(730 mV Typical)

Junction Capacitance (C_J)

475 pF

Junction Temperature (T_j)

-55 — 150 °C

Peak Repetitive Forward Current (I_FRM)

150 A

Peak Repetitive Reverse Voltage (V_RRM)

100 V

Reverse Breakdown Voltage (B_VR)

100 V

(112 V Typical)

Reverse Voltage Leakage Current (I_R)

15 µA

(2.5 µA Typical)

RMS Reverse Voltage (V_R(RMS))

70 V

Storage Temperature (T_stg)

-55 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

80 °C/W

Thermal Resistance Junction-Lead (Θ_JL)

15 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD40-CTLSH5-100-CT	WafflePack@324		Active	Bare die,68.000 X 68.000 mils,5.0A, 100V Schottky Rectifier	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD40-CTLSH5-100_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document