CPD48V-CBAT54

Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode

Case Type: CHIP,WAFFLE

Continuous Forward Current (IF)
200 mA
Continuous Reverse Voltage (VR)
30 V
Diode Capacitance (Cd)
10 pF
Forward Voltage (VF)
240 mV
Forward Voltage (VF)
320 mV
Forward Voltage (VF)
400 mV
Forward Voltage (VF)
800 mV
Forward Voltage (VF)
500 mV
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
600 mA
Peak Repetitive Forward Current (IFRM)
300 mA
Power Dissipation (PD)
350 mW
Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
2 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD48V-CBAT54-CM WafflePack@400 Active Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode EAR99 8541.10.0040 PBFREE
CPD48V-CBAT54-CT WafflePack@400 Active Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode EAR99 8541.10.0040 PBFREE

Resources

Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPD48V-CBAT54_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Spice Model:Spice Model CPD48V-CBAT54 Spice Model