CPD48V-CBAT54

Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode

Case Type: CHIP,WAFFLE

Continuous Forward Current (IF)
200 mA
Continuous Reverse Voltage (VR)
30 V
Diode Capacitance (Cd)
10 pF
Forward Voltage (VF)
240 mV
Forward Voltage (VF)
320 mV
Forward Voltage (VF)
400 mV
Forward Voltage (VF)
800 mV
Forward Voltage (VF)
500 mV
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
600 mA
Peak Repetitive Forward Current (IFRM)
300 mA
Power Dissipation (PD)
350 mW
Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
2 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD48V-CBAT54-CM WafflePack@400 Active Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode EAR99 8541.10.0040 PBFREE
CPD48V-CBAT54-CT WafflePack@400 Active Bare die,13.777 X 13.777 mils,Diode-Schottky (<1A),0.2A, 30V Schottky Diode EAR99 8541.10.0040 PBFREE

Resources

Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4 Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CPD48V-CBAT54_WPD.PDF Device Datasheet
Material Composition:SOT-23 Material Composition
Package Detail Document:SOT-23 Package Detail Document
Process Change Notice:All Switching, Schottky and Process Change Notice
Process Change Notice:Copper Wire Bonding Process Change Notice
Product Reliability Data:SOT-23 Package Reliability Product Reliability Data
Spice Model:Spice Model CBAT54 Spice Model
Step File 3D Object:SOT-23 Step File 3D Object