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CPD48V-CMPSH-3

30V Bare die,13.777 X 13.777 mils,Rectifier-Schottky (>=1A)

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Continuous Forward Current (IF)
100 mA
Forward Voltage (VF)
330 mV

(290 mV Typical)

Forward Voltage (VF)
450 mV

(370 mV Typical)

Forward Voltage (VF)
1 V

(0.51 V Typical)

Junction Capacitance (CJ)
20 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
750 mA
Peak Repetitive Forward Current (IFRM)
350 mA
Peak Repetitive Reverse Voltage (VRRM)
30 V
Power Dissipation (PD)
350 mW
Reverse Breakdown Voltage (BVR)
30 V
Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
500 nA

(90 nA Typical)

Reverse Voltage Leakage Current (IR)
100 µA

(25 µA Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD48V-CMPSH-3-CT WafflePack@400 Active 30V Bare die,13.777 X 13.777 mils,Rectifier-Schottky (>=1A) EAR99 8541.10.0040 PBFREE
CPD48V-CMPSH-3-WN Wafer Active 30V Bare die,13.777 X 13.777 mils,Rectifier-Schottky (>=1A) EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPD48V-CMPSH-3_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice

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