CPD51V-1N5711

Bare die,11.800 X 11.800 mils,High Voltage Schottky Diode

Case Type: CHIP,WAFFLE

Continuous Forward Current (I_F)

15 mA

Forward Voltage (V_F)

410 mV

(395 mV Typical)

Junction Capacitance (C_J)

2 pF

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

50 mA

Peak Repetitive Reverse Voltage (V_RRM)

70 V

Power Dissipation (P_D)

250 mW

Reverse Breakdown Voltage (B_VR)

70 V

Reverse Recovery Time (t_rr)

5 ns

Reverse Voltage Leakage Current (I_R)

200 nA

(10 nA Typical)

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

500 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD51V-1N5711-CM	WafflePack@400		Active	Bare die,11.800 X 11.800 mils,High Voltage Schottky Diode	EAR99	8541.10.0040	PBFREE
CPD51V-1N5711-CT	WafflePack@400		Active	Bare die,11.800 X 11.800 mils,High Voltage Schottky Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD51V-1N5711_WPD.pdf	Device Datasheet
Package Detail Document:WAFER	Package Detail Document