CPD77X-LSH3-30

Bare die,60.630 X 60.630 mils,3A, 30V Schottky Rectifier

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

3 A

Forward Voltage (V_F)

300 mV

Forward Voltage (V_F)

350 mV

Forward Voltage (V_F)

400 mV

Forward Voltage (V_F)

450 mV

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

25 A

Peak Repetitive Reverse Voltage (V_RRM)

30 V

Power Dissipation (P_D)

4.5 W

Power Dissipation (P_D)

4 W

Power Dissipation (P_D)

2.5 W

Reverse Breakdown Voltage (B_VR)

30 V

Reverse Voltage Leakage Current (I_R)

1 mA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

27.78 °C/W

Thermal Resistance Junction-Ambient (Θ_JA)

31.25 °C/W

Thermal Resistance Junction-Ambient (Θ_JA)

50 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD77X-LSH3-30-CT20	WafflePack@20		Active	Bare die,60.630 X 60.630 mils,3A, 30V Schottky Rectifier	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD77X-CTLSH3-30_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document