CPD82X-CMDSH2-3

200mA,30V Bare die,14.570 X 14.570 mils,Diode-Schottky (<1A)

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

200 mA

Forward Voltage (V_F)

186 mV

Forward Voltage (V_F)

245 mV

Forward Voltage (V_F)

350 mV

Forward Voltage (V_F)

550 mV

(420 mV Typical)

Junction Capacitance (C_J)

6 pF

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

1 A

Peak Repetitive Reverse Voltage (V_RRM)

30 V

Power Dissipation (P_D)

250 mW

Reverse Breakdown Voltage (B_VR)

30 V

Reverse Voltage Leakage Current (I_R)

50 µA

(19 µA Typical)

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

500 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD82X-CMDSH2-3-CM	WafflePack@400		Active	200mA,30V Bare die,14.570 X 14.570 mils,Diode-Schottky (<1A)	EAR99	8541.10.0040	PBFREE
CPD82X-CMDSH2-3-CT	WafflePack@400		Active	200mA,30V Bare die,14.570 X 14.570 mils,Diode-Schottky (<1A)	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD82X-CMDSH2-3_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document