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CPD87R-CFSH2-4L

200mA,40V Bare die,14.567 X 14.567 mils,Diode-Schottky (<1A)

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Average Forward Current (IO)
200 mA
Forward Voltage (VF)
450 mV

(330 mV Typical)

Forward Voltage (VF)
520 mV
Forward Voltage (VF)
600 mV

(530 mV Typical)

Junction Capacitance (CJ)
10 pF

(7 pF Typical)

Junction Temperature (Tj)
-65 — 125 °C
Peak Forward Surge Current (IFSM)
1 A
Peak Repetitive Reverse Voltage (VRRM)
40 V
Power Dissipation (PD)
100 mW
Reverse Breakdown Voltage (BVR)
40 V
Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
1 µA

(0.08 µA Typical)

Reverse Voltage Leakage Current (IR)
2 µA

(0.35 µA Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
1000 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD87R-CFSH2-4L-WN Wafer Active 200mA,40V Bare die,14.567 X 14.567 mils,Diode-Schottky (<1A) EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPD87R-CFSH2-4L_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document

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