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CPD98V-CMUSH2-4

40V Bare die,11.024 X 11.024 mils,Diode-Schottky (<1A)

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Continuous Forward Current (IF)
200 mA
Forward Voltage (VF)
260 mV

(240 mV Typical)

Forward Voltage (VF)
310 mV

(285 mV Typical)

Forward Voltage (VF)
330 mV

(305 mV Typical)

Forward Voltage (VF)
600 mV

(535 mV Typical)

Forward Voltage (VF)
750 mV

(670 mV Typical)

Junction Capacitance (CJ)
10 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
600 mA
Peak Repetitive Forward Current (IFRM)
300 mA
Peak Repetitive Reverse Voltage (VRRM)
40 V
Power Dissipation (PD)
250 mW
Reverse Breakdown Voltage (BVR)
40 V

(55 V Typical)

Reverse Recovery Time (trr)
5 ns
Reverse Voltage Leakage Current (IR)
500 nA

(80 nA Typical)

Reverse Voltage Leakage Current (IR)
100 µA

(25 µA Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
500 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD98V-CMUSH2-4-CT WafflePack@400 Active 40V Bare die,11.024 X 11.024 mils,Diode-Schottky (<1A) EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CPD98V-CMUSH2-4_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document