CPD41-1N4148

Bare die,19.685 X 19.685 mils,Diode-Switching,0.25A, 50V Switching Diode

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

150 mA

Continuous Forward Current (I_F)

200 mA

Continuous Reverse Voltage (V_R)

75 V

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

4 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

2 A

Peak Repetitive Reverse Voltage (V_RRM)

100 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

75 V

Reverse Breakdown Voltage (B_VR)

100 V

Reverse Recovery Time (t_rr)

4 ns

Reverse Voltage Leakage Current (I_R)

25 nA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD41-1N4148-CT	WafflePack@400		Discontinued	Bare die,19.685 X 19.685 mils,Diode-Switching,0.25A, 50V Switching Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD41.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPD41 REPLACED WITH CPD93V	Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS	Product EOL Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.