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CPD41-1N4150

200mA,50V Bare die,19.685 X 19.685 mils,Diode-Switching

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Average Forward Current (IO)
200 mA
Continuous Forward Current (IF)
400 mA
Forward Recovery Time (tfr)
10 ns
Forward Voltage (VF)
540 — 620 mV
Forward Voltage (VF)
660 — 740 mV
Forward Voltage (VF)
760 — 860 mV
Forward Voltage (VF)
820 — 920 mV
Forward Voltage (VF)
0.87 — 1 V
Junction Capacitance (CJ)
2.5 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current (IFSM)
1 A
Peak Forward Surge Current (IFSM)
4 A
Peak Repetitive Forward Current (IFRM)
600 mA
Peak Repetitive Reverse Voltage (VRRM)
50 V
Power Dissipation (PD)
500 mW
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Recovery Time (trr)
4 ns
Reverse Recovery Time (trr)
6 ns
Reverse Voltage Leakage Current (IR)
100 nA
Reverse Voltage Leakage Current (IR)
100 µA
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD41-1N4150-CT WafflePack@400 Discontinued 200mA,50V Bare die,19.685 X 19.685 mils,Diode-Switching EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CPD41.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:CPD41 REPLACED WITH CPD93V Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS Product EOL Notice