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CPD63-1N3064

Bare die,11.020 X 11.020 mils,Diode-Switching,High Speed Switching Diode

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Average Forward Current (IO)
75 mA
Continuous Forward Current (IF)
115 mA
Continuous Reverse Voltage (VR)
50 V
Forward Voltage (VF)
505 — 575 mV
Forward Voltage (VF)
550 — 650 mV
Forward Voltage (VF)
610 — 710 mV
Forward Voltage (VF)
1 V
Junction Capacitance (CJ)
2 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current (IFSM)
2 A
Peak Repetitive Forward Current (IFRM)
225 mA
Peak Repetitive Reverse Voltage (VRRM)
75 V
Power Dissipation (PD)
250 mW
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
100 nA
Reverse Voltage Leakage Current (IR)
100 µA
Storage Temperature (Tstg)
-65 — 200 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD63-1N3064-CT WafflePack@400 Discontinued, Stock Only Bare die,11.020 X 11.020 mils,Diode-Switching,High Speed Switching Diode EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Glass Encapsulation Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CPD63.PDF Device Datasheet
Material Composition:DO-35 Material Composition
Package Detail Document:DO-35 Package Detail Document
Product Reliability Data:DO-35 Package Reliability Product Reliability Data

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