CPD66X-1N457A

200mA,70V Bare die,17.500 X 17.500 mils,Diode-Low Leakage

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

200 mA

Continuous Forward Current (I_F)

500 mA

Continuous Reverse Voltage (V_R)

60 V

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

6 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Reverse Voltage (V_RRM)

70 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

70 V

Reverse Voltage Leakage Current (I_R)

25 nA

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD66X-1N457A-CT	WafflePack@400		Active	200mA,70V Bare die,17.500 X 17.500 mils,Diode-Low Leakage	EAR99	8541.10.0040	PBFREE
CPD66X-1N457A-WN	Wafer		Active	200mA,70V Bare die,17.500 X 17.500 mils,Diode-Low Leakage	EAR99	8541.10.0040	PBFREE


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AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.