CPD66X-1N485B

200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

200 mA

Continuous Forward Current (I_F)

500 mA

Continuous Reverse Voltage (V_R)

180 V

Forward Voltage (V_F)

1 V

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

1 A

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Forward Current (I_FRM)

600 mA

Peak Repetitive Reverse Voltage (V_RRM)

200 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

200 V

Reverse Voltage Leakage Current (I_R)

25 nA

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD66X-1N485B-CT	WafflePack@400		Active	200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage	EAR99	8541.10.0040	PBFREE
CPD66X-1N485B-WN	Wafer		Active	200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPD66X-1N485B_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPD66X DOPANT CHANGE	Process Change Notice
Spice Model:Spice Model CPD66	Spice Model

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.