CPD66X-1N485B

200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

200 mA

Continuous Forward Current (I_F)

500 mA

Continuous Reverse Voltage (V_R)

180 V

Forward Voltage (V_F)

1 V

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

1 A

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Forward Current (I_FRM)

600 mA

Peak Repetitive Reverse Voltage (V_RRM)

200 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

200 V

Reverse Voltage Leakage Current (I_R)

25 nA

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD66X-1N485B-CT	WafflePack@400		Active	200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
CPD66X-1N485B_WPD.PDF	Device Datasheet
Material Composition:DO-35	Material Composition
Package Detail Document:DO-35	Package Detail Document
Product EOL Notice:1N485B AND 1N486B	Product EOL Notice
Product Reliability Data:DO-35 Package Reliability	Product Reliability Data