CPD66X-CMHD459A

200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage

Case Type: WAFER

Average Forward Current (I_O)

200 mA

Continuous Forward Current (I_F)

500 mA

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

6 pF

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Reverse Voltage (V_RRM)

200 V

Peak Working Reverse Voltage (V_RWM)

175 V

Power Dissipation (P_D)

400 mW

Reverse Breakdown Voltage (B_VR)

200 V

Reverse Voltage Leakage Current (I_R)

25 nA

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

312.5 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD66X-CMHD459A-WN	Wafer		Active	200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPD66X.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPD66X DOPANT CHANGE	Process Change Notice

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AEM stands ready to assist with your latest design endeavors as your trusted partner.