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CPD66X-CMPD3003

200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Average Forward Current (IO)
200 mA
Continuous Forward Current (IF)
600 mA
Continuous Reverse Voltage (VR)
180 V
Forward Voltage (VF)
620 — 720 mV
Forward Voltage (VF)
720 — 830 mV
Forward Voltage (VF)
800 — 890 mV
Forward Voltage (VF)
830 — 930 mV
Forward Voltage (VF)
0.87 — 1.1 V
Forward Voltage (VF)
0.9 — 1.15 V
Junction Capacitance (CJ)
4 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
2 A
Peak Forward Surge Current (IFSM)
1 A
Peak Repetitive Forward Current (IFRM)
700 mA
Peak Repetitive Reverse Voltage (VRRM)
200 V
Power Dissipation (PD)
350 mW
Reverse Breakdown Voltage (BVR)
200 V
Reverse Voltage Leakage Current (IR)
1 nA
Reverse Voltage Leakage Current (IR)
3 µA
Reverse Voltage Leakage Current (IR)
10 nA
Reverse Voltage Leakage Current (IR)
5 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD66X-CMPD3003-CT WafflePack@400 Active 200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage EAR99 8541.10.0040 PBFREE
CPD66X-CMPD3003-WN Wafer Active 200mA,200V Bare die,17.500 X 17.500 mils,Diode-Low Leakage EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Alloy 42 leadframe Analytical Test Report
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Analytical Test Report:Halogen Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CPD66X-CMPD3003_WPD.PDF Device Datasheet
Material Composition:SOD-523 Material Composition
Package Detail Document:SOD-523 Package Detail Document
Product Reliability Data:SOD-523 Package Reliability Product Reliability Data

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