CPD80V-1N3070

200mA,175V Bare die,16.100 X 16.100 mils,Diode-Switching

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

200 mA

Continuous Forward Current (I_F)

500 mA

Continuous Reverse Voltage (V_R)

175 V

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

5 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

1 A

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Forward Current (I_FRM)

600 mA

Peak Repetitive Reverse Voltage (V_RRM)

175 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

200 V

Reverse Recovery Time (t_rr)

50 ns

Reverse Voltage Leakage Current (I_R)

100 nA

Reverse Voltage Leakage Current (I_R)

100 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD80V-1N3070-CM	WafflePack@400		Active	200mA,175V Bare die,16.100 X 16.100 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE
CPD80V-1N3070-CT	WafflePack@400		Active	200mA,175V Bare die,16.100 X 16.100 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD80V-1N3070_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Spice Model:Spice Model CPD80V	Spice Model