CPD80V-2003

Bare die,16.100 X 16.100 mils,High Voltage Switching Diode

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

200 mA

Continuous Forward Current (I_F)

225 mA

Continuous Reverse Voltage (V_R)

350 V

Forward Voltage (V_F)

1 V

(0.95 V Typical)

Junction Capacitance (C_J)

5 pF

(0.5 pF Typical)

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Forward Surge Current (I_FSM)

1 A

Peak Repetitive Forward Current (I_FRM)

625 mA

Peak Repetitive Reverse Voltage (V_RRM)

375 V

Power Dissipation (P_D)

350 mW

Reverse Breakdown Voltage (B_VR)

375 V

(460 V Typical)

Reverse Recovery Time (t_rr)

50 ns

(11 ns Typical)

Reverse Voltage Leakage Current (I_R)

1 µA

(0.07 µA Typical)

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

357 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD80V-2003-CT20	WafflePack@20		Special Order Item	Bare die,16.100 X 16.100 mils,High Voltage Switching Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD80V.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document