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CPD80V-2003

Bare die,16.100 X 16.100 mils,High Voltage Switching Diode

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Average Forward Current (IO)
200 mA
Continuous Forward Current (IF)
225 mA
Continuous Reverse Voltage (VR)
350 V
Forward Voltage (VF)
1 V

(0.95 V Typical)

Junction Capacitance (CJ)
5 pF

(0.5 pF Typical)

Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
4 A
Peak Forward Surge Current (IFSM)
1 A
Peak Repetitive Forward Current (IFRM)
625 mA
Peak Repetitive Reverse Voltage (VRRM)
375 V
Power Dissipation (PD)
350 mW
Reverse Breakdown Voltage (BVR)
375 V

(460 V Typical)

Reverse Recovery Time (trr)
50 ns

(11 ns Typical)

Reverse Voltage Leakage Current (IR)
1 µA

(0.07 µA Typical)

Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD80V-2003-CT20 WafflePack@20 Special Order Item Bare die,16.100 X 16.100 mils,High Voltage Switching Diode EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CPD80V.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document

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