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CPD80V-CMPD2004

200mA,300V Bare die,16.100 X 16.100 mils,Diode-Switching

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Average Forward Current (IO)
200 mA
Continuous Forward Current (IF)
225 mA
Continuous Reverse Voltage (VR)
240 V
Forward Voltage (VF)
1 V
Junction Capacitance (CJ)
5 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
4 A
Peak Forward Surge Current (IFSM)
1 A
Peak Repetitive Forward Current (IFRM)
625 mA
Peak Repetitive Reverse Voltage (VRRM)
300 V
Power Dissipation (PD)
350 mW
Reverse Breakdown Voltage (BVR)
300 V
Reverse Recovery Time (trr)
50 ns
Reverse Voltage Leakage Current (IR)
100 nA
Reverse Voltage Leakage Current (IR)
100 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD80V-CMPD2004-WN Wafer Active 200mA,300V Bare die,16.100 X 16.100 mils,Diode-Switching EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPD80V-CMPD2004_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Process Change Notice:Wafer Diameter Change from 4" Process Change Notice
Spice Model:Spice Model CPD80V Spice Model

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