CPD83V-1N3064

Bare die,11.027 X 11.027 mils,Diode-Switching,High Speed Switching Diode

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

75 mA

Continuous Forward Current (I_F)

115 mA

Continuous Reverse Voltage (V_R)

50 V

Forward Voltage (V_F)

505 — 575 mV

Forward Voltage (V_F)

550 — 650 mV

Forward Voltage (V_F)

610 — 710 mV

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

2 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

2 A

Peak Repetitive Forward Current (I_FRM)

225 mA

Peak Repetitive Reverse Voltage (V_RRM)

75 V

Power Dissipation (P_D)

250 mW

Reverse Breakdown Voltage (B_VR)

75 V

Reverse Recovery Time (t_rr)

4 ns

Reverse Voltage Leakage Current (I_R)

100 nA

Reverse Voltage Leakage Current (I_R)

100 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD83V-1N3064-CT	WafflePack@400		Active	Bare die,11.027 X 11.027 mils,Diode-Switching,High Speed Switching Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD83V-1N3064_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Spice Model:Spice Model CPD83V	Spice Model