CPD83V-1N4448

150mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

150 mA

Continuous Forward Current (I_F)

200 mA

Continuous Reverse Voltage (V_R)

75 V

Forward Voltage (V_F)

1 V

Forward Voltage (V_F)

620 — 720 mV

Junction Capacitance (C_J)

4 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

2 A

Peak Repetitive Reverse Voltage (V_RRM)

100 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

75 V

Reverse Breakdown Voltage (B_VR)

100 V

Reverse Recovery Time (t_rr)

4 ns

Reverse Voltage Leakage Current (I_R)

25 nA

Reverse Voltage Leakage Current (I_R)

50 µA

Reverse Voltage Leakage Current (I_R)

3 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD83V-1N4448-CT	WafflePack@400		Active	150mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE


Item	Type
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CPD83V-1N4448_WPD.PDF	Device Datasheet
Material Composition:SOT-523	Material Composition
Package Detail Document:SOT-523	Package Detail Document
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Product Reliability Data:SOT-523 Package Reliability	Product Reliability Data
Spice Model:Spice Model CMUD4448	Spice Model
Step File 3D Object:SOT-523 (SC-89)	Step File 3D Object