CPD83V-1N4454

150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

150 mA

Continuous Forward Current (I_F)

200 mA

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

2 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Reverse Voltage (V_RRM)

75 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

75 V

Reverse Recovery Time (t_rr)

2 ns

Reverse Recovery Time (t_rr)

4 ns

Reverse Voltage Leakage Current (I_R)

100 nA

Reverse Voltage Leakage Current (I_R)

100 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
CPD83V-1N4454-CM	WafflePack@400	Active	150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE
CPD83V-1N4454-CT	WafflePack@400	Active	150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE
CPD83V-1N4454-WN	Wafer	Active	150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
CPD83V-1N4454_WPD.PDF	Device Datasheet
Material Composition:DO-35	Material Composition
Package Detail Document:DO-35	Package Detail Document
Process Change Notice:DO-35 Alternate Marking	Process Change Notice
Product Reliability Data:DO-35 Package Reliability	Product Reliability Data

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.