CPD83V-1N4454

150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

150 mA

Continuous Forward Current (I_F)

200 mA

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

2 pF

Junction Temperature (T_j)

-65 — 200 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Repetitive Reverse Voltage (V_RRM)

75 V

Power Dissipation (P_D)

500 mW

Reverse Breakdown Voltage (B_VR)

75 V

Reverse Recovery Time (t_rr)

2 ns

Reverse Recovery Time (t_rr)

4 ns

Reverse Voltage Leakage Current (I_R)

100 nA

Reverse Voltage Leakage Current (I_R)

100 µA

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD83V-1N4454-CM	WafflePack@400		Active	150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE
CPD83V-1N4454-CT	WafflePack@400		Active	150mA,75V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
Analytical Test Report:Sn Plating	Analytical Test Report
CPD83V-1N4454_WPD.PDF	Device Datasheet
Material Composition:DO-35	Material Composition
Package Detail Document:DO-35	Package Detail Document
Process Change Notice:DO-35 Alternate Marking	Process Change Notice
Product Reliability Data:DO-35 Package Reliability	Product Reliability Data