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CPD83V-1N914A

Bare die,11.027 X 11.027 mils,High Speed Switching Diode

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Continuous Forward Current (IF)
250 mA
Continuous Reverse Voltage (VR)
75 V
Forward Voltage (VF)
850 mV

(720 mV Typical)

Forward Voltage (VF)
970 mV

(915 mV Typical)

Junction Capacitance (CJ)
2 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
4 A
Peak Forward Surge Current (IFSM)
2 A
Peak Forward Surge Current (IFSM)
1 A
Peak Repetitive Forward Current (IFRM)
250 mA
Peak Repetitive Reverse Voltage (VRRM)
120 V
Power Dissipation (PD)
350 mW
Reverse Breakdown Voltage (BVR)
120 V

(150 V Typical)

Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
25 nA
Reverse Voltage Leakage Current (IR)
5 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD83V-1N914A-CM WafflePack@400 Active Bare die,11.027 X 11.027 mils,High Speed Switching Diode EAR99 8541.10.0040 PBFREE
CPD83V-1N914A-CT WafflePack@400 Active Bare die,11.027 X 11.027 mils,High Speed Switching Diode EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CPD83V-1N914A_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document
Spice Model:Spice Model CPD83V Spice Model