CPD83V-CMPD7000

200mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

200 mA

Forward Voltage (V_F)

550 — 700 mV

Forward Voltage (V_F)

670 — 820 mV

Forward Voltage (V_F)

0.75 — 1.1 V

Junction Capacitance (C_J)

2.6 pF

(1.5 pF Typical)

Junction Temperature (T_j)

-65 — 150 °C

Peak Repetitive Forward Current (I_FRM)

500 mA

Peak Repetitive Reverse Voltage (V_RRM)

100 V

Power Dissipation (P_D)

350 mW

Reverse Breakdown Voltage (B_VR)

100 V

Reverse Recovery Time (t_rr)

4 ns

(2 ns Typical)

Reverse Voltage Leakage Current (I_R)

300 nA

Reverse Voltage Leakage Current (I_R)

100 µA

Reverse Voltage Leakage Current (I_R)

500 nA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

357 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD83V-CMPD7000-CT	WafflePack@400		Active	200mA,100V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
Package Detail Document:WAFER	Package Detail Document
Spice Model:Spice Model CPD83V	Spice Model