CPD83V-CMPD914

100V Bare die,11.027 X 11.027 mils,Diode-Switching

Case Type: CHIP,WAFFLE

Continuous Forward Current (I_F)

250 mA

Continuous Reverse Voltage (V_R)

75 V

Forward Voltage (V_F)

1 V

Junction Capacitance (C_J)

4 pF

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Forward Surge Current (I_FSM)

2 A

Peak Forward Surge Current (I_FSM)

1 A

Peak Repetitive Forward Current (I_FRM)

250 mA

Peak Repetitive Reverse Voltage (V_RRM)

100 V

Power Dissipation (P_D)

350 mW

Reverse Breakdown Voltage (B_VR)

100 V

Reverse Recovery Time (t_rr)

4 ns

Reverse Voltage Leakage Current (I_R)

25 nA

Reverse Voltage Leakage Current (I_R)

5 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

357 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD83V-CMPD914-CT	WafflePack@400		Active	100V Bare die,11.027 X 11.027 mils,Diode-Switching	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Glass Encapsulation	Analytical Test Report
Analytical Test Report:Leadframe	Analytical Test Report
CPD83V-CMPD914_WPD.PDF	Device Datasheet
Material Composition:SOD-80	Material Composition
Package Detail Document:SOD-80	Package Detail Document
Product Reliability Data:SOD-80 Package Reliability	Product Reliability Data
Spice Model:Spice Model CLL914	Spice Model