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CPD89V-CMPD5001

120V Bare die,12.800 X 12.800 mils,Diode-Switching

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Continuous Forward Current (IF)
400 mA
Forward Voltage (VF)
750 mV
Forward Voltage (VF)
840 mV
Forward Voltage (VF)
900 mV
Forward Voltage (VF)
1 V
Forward Voltage (VF)
1.25 V
Junction Capacitance (CJ)
35 pF
Junction Temperature (Tj)
-65 — 150 °C
Peak Forward Surge Current (IFSM)
6 A
Peak Forward Surge Current (IFSM)
1.5 A
Peak Repetitive Forward Current (IFRM)
800 mA
Peak Repetitive Reverse Current (IRRM)
600 mA
Peak Repetitive Reverse Voltage (VRRM)
120 V
Power Dissipation (PD)
350 mW
Reverse Breakdown Voltage (BVR)
120 — 325 V
Reverse Recovery Time (trr)
60 ns
Reverse Recovery Time (trr)
50 ns
Reverse Voltage Leakage Current (IR)
100 nA
Reverse Voltage Leakage Current (IR)
100 µA
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPD89V-CMPD5001-WN Wafer Active 120V Bare die,12.800 X 12.800 mils,Diode-Switching EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:TVS Die Analytical Test Report
Analytical Test Report:Wafer Rectifier Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
Analytical Test Report:Wafer Zener Analytical Test Report
Analytical Test Report:Wafer/Die Analytical Test Report
CPD89V-CMPD5001_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document

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