CPD91V-CD6001

Bare die,11.030 X 11.030 mils,Low Leakage Switching Diode

Case Type: CHIP,WAFFLE

Average Forward Current (I_O)

250 mA

Continuous Reverse Voltage (V_R)

75 V

Forward Voltage (V_F)

850 mV

Forward Voltage (V_F)

950 mV

Forward Voltage (V_F)

1.1 V

Junction Capacitance (C_J)

2 pF

Junction Temperature (T_j)

-65 — 150 °C

Peak Forward Surge Current (I_FSM)

4 A

Peak Forward Surge Current (I_FSM)

1 A

Peak Repetitive Reverse Voltage (V_RRM)

100 V

Power Dissipation (P_D)

250 mW

Reverse Breakdown Voltage (B_VR)

100 V

Reverse Recovery Time (t_rr)

3 µs

Reverse Voltage Leakage Current (I_R)

500 pA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Case (Θ_JC)

500 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPD91V-CD6001-CT200	WafflePack@200		Special Order Item	Bare die,11.030 X 11.030 mils,Low Leakage Switching Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPD91V-CMPD6001_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document