CPZ18-1N5228B

3.9V,500mW Bare die,13.779 X 13.779 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.2 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Temperature Coefficient (ΘV_Z)

-0.06 %/°C

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

10 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

23 Ω

Zener Knee Impedance (Z_ZK)

1900 Ω

Zener Voltage (V_Z)

3.705 — 4.095 V

(3.9 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ18-1N5228B-CM	WafflePack@400		Active	3.9V,500mW Bare die,13.779 X 13.779 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE
CPZ18-1N5228B-CT	WafflePack@400		Active	3.9V,500mW Bare die,13.779 X 13.779 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ18.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ18 REPLACED WITH CPZ28X	Process Change Notice