CPZ19-1N4099

6.8V,250mW Bare die,17.716 X 17.716 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.1 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Zener Current (I_ZM)

35 mA

Noise Density (N_D)

Power Dissipation (P_D)

250 mW

Reverse Voltage Leakage Current (I_R)

10 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

200 Ω

Zener Voltage (V_Z)

6.46 — 7.14 V

(6.8 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ19-1N4099-CT	WafflePack@400		Limited Availability	6.8V,250mW Bare die,17.716 X 17.716 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ19.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ19 REPLACED WITH CPZ28	Process Change Notice