CPZ19-BZX84C39

39V,350mW Bare die,17.716 X 17.716 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

900 mV

Junction Temperature (T_j)

-65 — 150 °C

Maximum Temperature Coefficient (ΘV_Z)

0.09 %/°C

Maximum Zener Current (I_ZM)

6.4 mA

Power Dissipation (P_D)

350 mW

Reverse Voltage Leakage Current (I_R)

0.05 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

357 °C/W

Zener Impedance (Z_ZT)

130 Ω

Zener Knee Impedance (Z_ZK)

350 Ω

Zener Voltage (V_Z)

37 — 41 V

(39 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ19-BZX84C39-CT	WafflePack@400		Discontinued	39V,350mW Bare die,17.716 X 17.716 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ19-BZX84C6V8_SERIES_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ19 REPLACED WITH CPZ28	Process Change Notice
Product EOL Notice:BLANKET PDN-BARE DIE PRODUCTS	Product EOL Notice