CPZ28-1N6001B

Bare die,12.990 X 12.990 mils,0.5W Zener Diode

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 150 °C

Maximum Zener Current (I_ZM)

35 mA

Peak Forward Surge Current (I_FSM)

10 A

Peak Pulse Power (P_PK)

200 W

Peak Pulse Power (P_PK)

1000 W

Power Dissipation (P_D)

1.5 W

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

1 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

250 °C/W

Thermal Resistance Junction-Lead (Θ_JL)

50 °C/W

Zener Impedance (Z_ZT)

53 Ω

Zener Knee Impedance (Z_ZK)

950 Ω

Zener Voltage (V_Z)

40.85 — 45.15 V

(43 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ28-1N6001B-CT	WafflePack@400		Discontinued, Stock Only	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ28.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document