CPZ28X-1N4104

Technical Specifications

Forward Voltage (V_F)

1.1 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Zener Current (I_ZM)

24.8 mA

Noise Density (N_D)

40

Power Dissipation (P_D)

250 mW

Reverse Voltage Leakage Current (I_R)

1 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

200 Ω

Zener Voltage (V_Z)

9.5 — 10.5 V

(10 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ28X-1N4104-CT	WafflePack@400		Limited Availability	10V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE
CPZ28X-1N4104-WN	Wafer		Limited Availability	10V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:TVS Die	Analytical Test Report
Analytical Test Report:Wafer Rectifier	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
Analytical Test Report:Wafer Zener	Analytical Test Report
Analytical Test Report:Wafer/Die	Analytical Test Report
CPZ28X-1N4099-4135_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ19 REPLACED WITH CPZ28	Process Change Notice

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.