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CPZ28X-1N4688

4.7V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: WAFER

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Technical Specifications

Similar Products with Selected Specifications
Forward Voltage (VF)
1.5 V
Junction Temperature (Tj)
-65 — 200 °C
Maximum Change in Zener Voltage Over Current (ΔVZ)
990 mV
Maximum Zener Current (IZM)
60 mA
Power Dissipation (PD)
500 mW
Reverse Voltage Leakage Current (IR)
10 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Voltage (VZ)
4.465 — 4.935 V

(4.7 V Typical)

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPZ28X-1N4688-WN Wafer Limited Availability 4.7V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Henkel 84-1LMISR4 Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CPZ28X-1N4678-4717_WPD.PDF Device Datasheet
Material Composition:SOT-23 Material Composition
Package Detail Document:SOT-23 Package Detail Document
Process Change Notice:0.35W ZENER Process Change Notice
Process Change Notice:All Switching, Schottky and Process Change Notice
Process Change Notice:Copper Wire Bonding Process Change Notice
Process Change Notice:CPZ18 REPLACED WITH CPZ28X Process Change Notice
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X Process Change Notice
Product Reliability Data:SOT-23 Package Reliability Product Reliability Data
Step File 3D Object:SOT-23 Step File 3D Object

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Design Support

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