CPZ28X-1N757A

9.1V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

1.5 V

Junction Temperature (T_j)

-65 — 200 °C

Maximum Zener Current (I_ZM)

40 mA

Power Dissipation (P_D)

500 mW

Reverse Voltage Leakage Current (I_R)

100 nA

Reverse Voltage Leakage Current (I_R)

20 µA

Storage Temperature (T_stg)

-65 — 200 °C

Zener Impedance (Z_ZT)

10 Ω

Zener Voltage (V_Z)

8.645 — 9.555 V

(9.1 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ28X-1N757A-CM	WafflePack@400		Limited Availability	9.1V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE
CPZ28X-1N757A-CT	WafflePack@400		Limited Availability	9.1V,500mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ28X-1N746A-759A_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice