CPZ28X-BZX55C22

Bare die,12.990 X 12.990 mils,0.5W Zener Diode

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

900 mV

Junction Temperature (T_j)

-65 — 150 °C

Maximum Temperature Coefficient (ΘV_Z)

0.077 %/°C

Power Dissipation (P_D)

350 mW

Reverse Voltage Leakage Current (I_R)

1 µA

Storage Temperature (T_stg)

-65 — 150 °C

Zener Impedance (Z_ZT)

30 Ω

Zener Knee Impedance (Z_ZK)

600 Ω

Zener Voltage (V_Z)

11.4 — 12.6 V

(12 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ28X-BZX55C22-CT	WafflePack@400		Limited Availability	Bare die,12.990 X 12.990 mils,0.5W Zener Diode	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ28X-BZX55C3V3_SERIES_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ19 REPLACED WITH CPZ28	Process Change Notice
Product EOL Notice:CPZ18 / CPZ19 devices	Product EOL Notice