CPZ28X-BZX84C6V2

6.2V,350mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (V_F)

900 mV

Junction Temperature (T_j)

-65 — 150 °C

Maximum Temperature Coefficient (ΘV_Z)

0.04 %/°C

Maximum Zener Current (I_ZM)

40 mA

Power Dissipation (P_D)

350 mW

Reverse Voltage Leakage Current (I_R)

3 µA

Storage Temperature (T_stg)

-65 — 150 °C

Thermal Resistance Junction-Ambient (Θ_JA)

357 °C/W

Zener Impedance (Z_ZT)

10 Ω

Zener Knee Impedance (Z_ZK)

150 Ω

Zener Voltage (V_Z)

5.8 — 6.6 V

(6.2 V Typical)

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
CPZ28X-BZX84C6V2-CT	WafflePack@400		Limited Availability	6.2V,350mW Bare die,12.990 X 12.990 mils,Diode-Zener	EAR99	8541.10.0040	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Active Device, Rectifier	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Die	Analytical Test Report
Analytical Test Report:Wafer Schottky	Analytical Test Report
Analytical Test Report:Wafer Switching Diode	Analytical Test Report
Analytical Test Report:Wafer Transistor	Analytical Test Report
CPZ28X-BZX84C2V4_SER_WPD.PDF	Device Datasheet
Package Detail Document:WAFER	Package Detail Document
Process Change Notice:CPZ28x ----> CPZ58X/CPZ59X	Process Change Notice