CPZ48X-1N4100

7.5V,250mW Bare die,13.000 X 13.000 mils,Diode-Zener

Case Type: CHIP,WAFFLE

Forward Voltage (VF)
1.1 V
Junction Temperature (Tj)
-65 — 200 °C
Maximum Zener Current (IZM)
31.8 mA
Noise Density (ND)
40
Power Dissipation (PD)
250 mW
Reverse Voltage Leakage Current (IR)
10 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
200 Ω
Zener Voltage (VZ)
7.125 — 7.875 V

(7.5 V Typical)

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPZ48X-1N4100-CT WafflePack@400 Active 7.5V,250mW Bare die,13.000 X 13.000 mils,Diode-Zener EAR99 8541.10.0040 PBFREE

Resources

Analytical Test Report:Copper Bond Wire Analytical Test Report
Analytical Test Report:Gold Bond Wire Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
CPZ48X-1N4099-4135_WPD.PDF Device Datasheet
Material Composition:SOD-123 Material Composition
Package Detail Document:SOD-123 Package Detail Document
Process Change Notice:Copper Wire Bonding Process Change Notice
Process Change Notice:CPZ19 REPLACED WITH CPZ28 Process Change Notice
Product Reliability Data:SOD-123 Package Reliability Product Reliability Data