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CPZ58X-1N4103

9.1V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener

Case Type: CHIP,WAFFLE

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Technical Specifications

Similar Products with Selected Specifications
Forward Voltage (VF)
1.1 V
Junction Temperature (Tj)
-65 — 200 °C
Maximum Zener Current (IZM)
26.2 mA
Noise Density (ND)
40
Power Dissipation (PD)
250 mW
Reverse Voltage Leakage Current (IR)
1 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
200 Ω
Zener Voltage (VZ)
8.645 — 9.555 V

(9.1 V Typical)

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
CPZ58X-1N4103-CT WafflePack@400 Active 9.1V,250mW Bare die,12.990 X 12.990 mils,Diode-Zener EAR99 8541.10.0040 PBFREE

Resources

Item Type
Analytical Test Report:Active Device, Rectifier Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Die Analytical Test Report
Analytical Test Report:Wafer Schottky Analytical Test Report
Analytical Test Report:Wafer Switching Diode Analytical Test Report
Analytical Test Report:Wafer Transistor Analytical Test Report
CPZ28X-1N4099-4135_WPD.PDF Device Datasheet
Package Detail Document:WAFER Package Detail Document